2000-04-20 page 1 spp80n06s2l-07 SPB80N06S2L-07 preliminary data optimos ? ? ? ? = == = power-transistor features ? n-channel ? enhancement mode ? avalanche rated ? logic level ? d v /d t rated ? = 175c operating temperature product summary drain source voltage v ds 55 v drain-source on-state resistance r ds ( on ) 7 m ? continuous drain current i d 80 a pin 1 pin 2/4 pin 3 g d s type package ordering code spp80n06s2l-07 p-to220-3-1 q67040-s4285 SPB80N06S2L-07 p-to263-3-2 q67040-s4288 maximum ratings ,at t j = 25 c, unless otherwise specified parameter symbol value unit continuous drain current t c = 25 c, 1) t c = 100 c i d 80 80 a pulsed drain current t c = 25 c i d puls 320 avalanche energy, single pulse i d = 80 a , v dd = 25 v, r gs = 25 ? e as 450 mj reverse diode d v /d t i s = 80 a, v ds = 44 v, d i /d t = 200 a/s, t jmax = 175 c d v /d t 6 kv/s gate source voltage v gs 20 v power dissipation t c = 25 c p tot 210 w operating and storage temperature t j , t st g -55...+175 c iec climatic category; din iec 68-1 55/175/56 1 current limited by bondwire; with an r thjc = 0.7 k/w the chip is able to carry i d = 122 a.
2000-04-20 page 2 spp80n06s2l-07 SPB80N06S2L-07 preliminary data thermal characteristics parameter symbol values unit min. typ. max. characteristics thermal resistance, junction - case r thjc - - 0.7 k/w thermal resistance, junction - ambient, leaded r thj a - - 62 smd version, device on pcb: @ min. footprint @ 6 cm 2 cooling area 1) r thja - - - - 62 40 electrical characteristics , at t j = 25 c, unless otherwise specified parameter symbol values unit min. typ. max. static characteristics drain-source breakdown voltage v gs = 0 v, i d = 1 ma v (br)dss 55 - - v gate threshold voltage, v gs = v ds i d = 150 a v gs(th) 1.2 1.6 2 zero gate voltage drain current v ds = 55 v, v gs = 0 v, t j = 25 c v ds = 55 v, v gs = 0 v, t j = 125 c i dss - - 0.01 1 1 100 a gate-source leakage current v gs = 20 v, v ds = 0 v i gss - 1 100 na drain-source on-state resistance v gs = 4.5 v, i d = 60 a r ds(on) - 6.7 10 m ? drain-source on-state resistance v gs = 10 v, i d = 60 a r ds(on) - 5.3 7 1 device on 40mm*40mm*1.5mm epoxy pcb fr4 with 6cm2 (one layer, 70 m thick) copper area for drain connection. pcb is vertical without blown air.
2000-04-20 page 3 spp80n06s2l-07 SPB80N06S2L-07 preliminary data electrical characteristics , at t j = 25 c, unless otherwise specified parameter symbol conditions values unit min. typ. max. dynamic characteristics transconductance g fs v ds 2* i d * r ds(on)max , i d =80a 52 104 - s input capacitance c iss v gs =0v, v ds =25v, f =1mhz - 3160 4000 pf output capacitance c oss - 780 1000 reverse transfer capacitance c rss - 215 290 turn-on delay time t d ( on ) v dd =30v, v gs =4.5v, i d =80a, r g =2 ? - 350 520 ns rise time t r - 18 27 turn-off delay time t d ( off ) - 28 42 fall time t f - 31 47 gate charge characteristics gate to source charge q g s v dd =44v, i d =80a - 11 15 nc gate to drain charge q g d - 32 40 gate charge total q g v dd =44v, i d =80a, v gs =0 to 10v - 97 120 gate plateau voltage v (p lateau ) v dd =44v, i d =80a - 3.5 - v reverse diode inverse diode continuous forward current i s t c =25c - - 80 a inverse diode direct current, pulsed i sm - - 320 inverse diode forward voltage v sd v gs =0v, i f =80a - 0.9 1.3 v reverse recovery time t rr v r =30v, i f = l s , d i f /d t =100a/s - 50 62 ns reverse recovery charge q rr - 105 130 nc
2000-04-20 page 4 spp80n06s2l-07 SPB80N06S2L-07 preliminary data power dissipation p tot = f ( t c ) 0 20 40 60 80 100 120 140 160 c 190 t c 0 20 40 60 80 100 120 140 160 180 200 w 240 spp80n06s2l-07 p tot drain current i d = f ( t c ) parameter: v gs 10 v 0 20 40 60 80 100 120 140 160 c 190 t c 0 10 20 30 40 50 60 70 a 90 spp80n06s2l-07 i d safe operating area i d = f ( v ds ) parameter : d = 0 , t c = 25 c 10 -1 10 0 10 1 10 2 v v ds 0 10 1 10 2 10 3 10 a spp80n06s2l-07 i d r d s ( o n ) = v d s / i d dc 10 ms 1 ms 100 s t p = 10.0 s transient thermal impedance z thjc = f ( t p ) parameter : d = t p / t 10 -7 10 -6 10 -5 10 -4 10 -3 10 -2 10 0 s t p -5 10 -4 10 -3 10 -2 10 -1 10 0 10 1 10 k/w spp80n06s2l-07 z thjc single pulse 0.01 0.02 0.05 0.10 0.20 d = 0.50
2000-04-20 page 5 spp80n06s2l-07 SPB80N06S2L-07 preliminary data typ. output characteristic i d = f ( v ds ); t j =25c parameter: t p = 80 s 0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 v 5.0 v ds 0 20 40 60 80 100 120 140 160 a 190 spp80n06s2l-07 i d v gs [v] a a 3.0 b b 3.2 c c 3.5 d d 3.8 e e 4.0 f f 4.5 g g 5.0 h p tot = 210 w h 10.0 typ. drain-source-on-resistance r ds(on) = f ( i d ) parameter: v gs 0 20 40 60 80 a 120 i d 0 2 4 6 8 10 12 14 16 18 20 m ? 24 spp80n06s2l-07 r ds(on) v gs [v] = b b 3.2 c c 3.5 d d 3.8 e e 4.0 f f 4.5 g g 5.0 h h 10.0 typ. transfer characteristics i d = f ( v gs ) v ds 2 x i d x r ds(on)max parameter: t p = 80 s 0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 v 5.0 v gs 0 20 40 60 80 100 120 a 160 i d typ. forward transconductance g fs = f( i d ); t j =25c parameter: g fs 0 20 40 60 80 a 110 i d 0 10 20 30 40 50 60 70 80 90 s 110 g fs
2000-04-20 page 6 spp80n06s2l-07 SPB80N06S2L-07 preliminary data drain-source on-state resistance r ds(on) = f ( t j ) parameter : i d = 60 a, v gs = 10 v -60 -20 20 60 100 140 c 200 t j 0 2 4 6 8 10 12 14 16 18 20 22 m ? 26 spp80n06s2l-07 r ds(on) typ 98% gate threshold voltage v gs(th) = f ( t j ) parameter: v gs = v ds , i d = 150 a -60 -20 20 60 100 c 180 t j 0.0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8 2.0 v 2.4 v gs(th) 98 % typ. 2 % typ. capacitances c = f ( v ds ) parameter: v gs =0v, f =1 mhz 0 5 10 15 20 v 30 v ds 2 10 3 10 4 10 pf c c iss c oss c rss forward characteristics of reverse diode i f = f (v sd ) parameter: t j , t p = 80 s 0.0 0.4 0.8 1.2 1.6 2.0 2.4 v 3.0 v sd 0 10 1 10 2 10 3 10 a spp80n06s2l-07 i f t j = 25 c typ t j = 25 c (98%) t j = 175 c typ t j = 175 c (98%)
2000-04-20 page 7 spp80n06s2l-07 SPB80N06S2L-07 preliminary data avalanche energy e as = f ( t j ) par.: i d = 80 a , v dd = 25 v, r gs = 25 ? 25 50 75 100 125 c 175 t j 0 50 100 150 200 250 300 350 mj 450 e as typ. gate charge v gs = f ( q gate ) parameter: i d = 80 a pulsed 0 20 40 60 80 100 120 nc 150 q gate 0 2 4 6 8 10 12 v 16 spp80n06s2l-07 v gs 0,8 v ds max ds max v 0,2 drain-source breakdown voltage v (br)dss = f ( t j ) parameter: i d =10 ma -60 -20 20 60 100 140 c 200 t j 50 52 54 56 58 60 62 64 v 66 spp80n06s2l-07 v (br)dss
2000-04-20 page 8 spp80n06s2l-07 SPB80N06S2L-07 preliminary data published by infineon technologies ag , bereichs kommunikation st.-martin-strasse 53, d-81541 mnchen ? infineon technologies ag 1999 all rights reserved. attention please! the information herein is given to describe certain components and shall not be considered as warranted characteristics. terms of delivery and rights to technical change reserved. we hereby disclaim any and all warranties, including but not limited to warranties of non-infringement, regarding circuits, descriptions and charts stated herein. infineon technologies is an approved cecc manufacturer. information for further information on technology, delivery terms and conditions and prices please contact your nearest infineon technologies office in germany or our infineon technologies reprensatives worldwide (see address list). warnings due to technical requirements components may contain dangerous substances. for information on the types in question please contact your nearest infineon technologies office. infineon technologies components may only be used in life-support devices or systems with the express written approval of infineon technologies, if a failure of such components can reasonably be expected to cause the failure of that life-support device or system, or to affect the safety or effectiveness of that device or system life support devices or systems are intended to be implanted in the human body, or to support and/or maintain and sustain and/or protect human life. if they fail, it is reasonable to assume that the health of the user or other persons may be endangered.
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